In News
- Recently, Researchers in India have shown for the first time infrared (IR) light emission and absorption with GaN nanostructures.
Key Points
- This is the first time that infrared light-matter interactions are demonstrated in GaN.
- Researchers have utilized a scientific phenomenon called surface polariton excitations in GaN nanostructures that lead to light-matter interactions at IR spectral range.
- This can help develop highly efficient infrared absorbers, emitters, and modulators that are useful in defence technologies, energy technologies, imaging, sensing, and so on.
- Polaritonic technologies have attracted a wide range of applications, such as secure high-speed light-based communication (LiFi), next-generation light sources, solar energy converters, quantum computers, and waste-heat converters.
About Gallium Nitride (GaN)
- One of the most advanced semiconductors.Â
- It is a widely used material for blue light emission.
- Advantages: Reliable, compact size, high efficiency, fast switching speed, low on-resistance, and high thermal conductivity.
- GaN Technology is of strategic importance with its application to 5G, space and defence applications.
Source: PIB
