{"id":14456,"date":"2021-03-19T00:00:00","date_gmt":"2021-03-19T00:00:00","guid":{"rendered":"https:\/\/www.nextias.com\/current_affairs\/uncategorized\/19-03-2021\/new-technology-for-high-electron-mobility-transistor\/"},"modified":"2021-03-19T00:00:00","modified_gmt":"2021-03-19T00:00:00","slug":"new-technology-for-high-electron-mobility-transistor","status":"publish","type":"post","link":"https:\/\/www.nextias.com\/ca\/current-affairs\/19-03-2021\/new-technology-for-high-electron-mobility-transistor","title":{"rendered":"New Technology for High Electron Mobility Transistor"},"content":{"rendered":"<p><strong>In News<\/strong><\/p>\n<p>Recently, scientists at the Indian Institute of Science, Bengaluru, have developed the country\u2019s\u00a0 first-ever indigenous HEMT device (<strong>High<\/strong> <strong>Electron Mobility Transistor) using gallium nitride (GaN). <\/strong><\/p>\n<p><strong>About the Development <\/strong><\/p>\n<ul>\n<li>It is made of <strong>aluminium gallium nitride\/ gallium nitrid<\/strong>e (AlGaN\/GaN).<\/li>\n<li>It provides an <strong>edge over silicon-based transistors,<\/strong> as they allow the <strong>systems to operate at very high voltages and occupy less space.<\/strong><\/li>\n<li>The scientists used <strong>aluminium titanium oxide<\/strong> as the <strong>gate oxide,<\/strong> where the <strong>percentage of aluminium <\/strong>could be<strong> controlled during the fabrication process<\/strong>.\n<ul>\n<li>Since aluminium titanium oxide is stable, it resulted in the high reliability of the transistor.<\/li>\n<\/ul>\n<\/li>\n<li>The<strong> HEMT <\/strong>is normally <strong>an \u2018OFF device\u2019 <\/strong>and can switch currents up to<strong> 4A and operates at 600V. <\/strong>\n<ul>\n<li><strong>OFF state<\/strong>, which affects the<strong> stability, performance and reliability of the device<\/strong>.<\/li>\n<\/ul>\n<\/li>\n<li>The projected overall power device market is set to <strong>cross the 18 Billion $ mark by 2020, <\/strong>out of which the market for <strong>HEMTs is projected to cross the 5 Billion US$ market.<\/strong><\/li>\n<\/ul>\n<ul>\n<li>A new kind of <strong>HEMT works like any other commonly used power transistor<\/strong>.\n<ul>\n<li>Such transistors are called<strong> e-mode or enhancement mode transistors. <\/strong><\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p><strong><img decoding=\"async\" src=\"https:\/\/cfstatic.nextias.com\/cdn-cgi\/image\/format=auto\/file_library\/mix_content\/258946105153906340_image.png\" style=\"height:154px; margin-left:150px; margin-right:150px; width:462px\" \/><\/strong><\/p>\n<p>Fig. 1. Device structure depicting the proposed novel aluminium titanium oxide, which acts as p-type gate oxide to achieve normally-off operation in GaN HEMTs and the energy band diagram depicting the proposed concept<\/p>\n<p><strong><img decoding=\"async\" src=\"https:\/\/cfstatic.nextias.com\/cdn-cgi\/image\/format=auto\/file_library\/mix_content\/882651221514033400_image.png\" style=\"height:176px; margin-left:150px; margin-right:150px; width:344px\" \/><\/strong><\/p>\n<p>\u00a0<\/p>\n<p>Fig. 2. Optical image of the fabricated e-mode HEMTs with the meandering gate structure<\/p>\n<p><strong>Significance <\/strong><\/p>\n<ul>\n<li>It is <strong>useful in electric<\/strong> <strong>cars, locomotives, power transmission<\/strong> and other <strong>areas requiring high voltag<\/strong>e and <strong>high-frequency switching.<\/strong>\n<ul>\n<li><strong>It would<\/strong> reduce the <strong>cost of importing such stable <\/strong>and <strong>efficient transistors required in power electronics.<\/strong><\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<ul>\n<li>It does away with intrinsic <strong>reliability and performance issues<\/strong> of the<strong> in-use industrial <\/strong>techniques for<strong> e-mode HEMTs<\/strong>, allowing the development of<strong> efficient power switching systems.<\/strong><\/li>\n<li>With a growing market for<strong> electric vehicles in India<\/strong>, such an <strong>indigenous development<\/strong> can make<strong> India self-reliant for transistor technology.<\/strong><\/li>\n<\/ul>\n<p>\u00a0<\/p>\n<table border=\"1\" cellspacing=\"0\" style=\"width:735px\">\n<tbody>\n<tr>\n<td style=\"background-color:#fff2cc; width:468.0pt\">\n<p><strong>High Electron Mobility Transistor (HEMT) <\/strong><\/p>\n<p>\u00a0<\/p>\n<ul>\n<li>It is a <strong>type of field-effect transistor (FET)<\/strong>, that is used to offer a <strong>combination of low noise figure and very high levels <\/strong>of performance at <strong>microwave frequencies.<\/strong><\/li>\n<li>This is an important device for <strong>high speed, high frequency, digital circuits<\/strong> and <strong>microwave circuits with low noise applications. <\/strong><\/li>\n<li>It can be described as a <strong>field-effect transistor<\/strong> that i<strong>ncorporates a combination <\/strong>of <strong>two materials <\/strong>with <strong>varying band gaps<\/strong>, which would be the <strong>heterojunction<\/strong>, as the channel in place of a doped region.\n<ul>\n<li>They possess unique current-voltage characteristics.<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<p><a href=\"https:\/\/pib.gov.in\/PressReleaseIframePage.aspx?PRID=1705691#:~:text=New%20technology%20for%20High%20Electron,reliant%20in%20power%20transistor%20technology&#038;text=Scientists%20from%20Bangalore%20have%20developed,4A%20and%20operates%20at%20600V.\" target=\"_blank\" rel=\"noopener\">Source :PIB<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>In News Recently, scientists at the Indian Institute of Science, Bengaluru, have developed the country\u2019s\u00a0 first-ever indigenous HEMT device (High Electron Mobility Transistor) using gallium nitride (GaN). About the Development It is made of aluminium gallium nitride\/ gallium nitride (AlGaN\/GaN). It provides an edge over silicon-based transistors, as they allow the systems to operate at [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":14457,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[21],"tags":[26,33],"class_list":["post-14456","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-current-affairs","tag-gs-3","tag-science-technology"],"acf":[],"jetpack_featured_media_url":"https:\/\/wp-images.nextias.com\/cdn-cgi\/image\/format=auto\/ca\/uploads\/2023\/07\/60179276268277current-affairs.jpg","_links":{"self":[{"href":"https:\/\/www.nextias.com\/ca\/wp-json\/wp\/v2\/posts\/14456","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.nextias.com\/ca\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.nextias.com\/ca\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.nextias.com\/ca\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.nextias.com\/ca\/wp-json\/wp\/v2\/comments?post=14456"}],"version-history":[{"count":0,"href":"https:\/\/www.nextias.com\/ca\/wp-json\/wp\/v2\/posts\/14456\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.nextias.com\/ca\/wp-json\/wp\/v2\/media\/14457"}],"wp:attachment":[{"href":"https:\/\/www.nextias.com\/ca\/wp-json\/wp\/v2\/media?parent=14456"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.nextias.com\/ca\/wp-json\/wp\/v2\/categories?post=14456"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.nextias.com\/ca\/wp-json\/wp\/v2\/tags?post=14456"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}